STB13N80K5 Datasheet PDF - ST Microelectronics

●This STB13N80K5 power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 19000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with supermesh technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.