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STB18NM80 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

TO-263-3

Description:

D2PAK N-CH 800V 17A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

STB18NM80 Datasheet (21 Pages)

Package Outline Dimension on10 Page 11 Page 12 Page 13 Page 14 Page

STB18NM80 Datasheet PDF (21 Pages)

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STB18NM80 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-263-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.25 Ω

Polarity

N-Channel

Power Dissipation

190 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

800 V

Continuous Drain Current (Ids)

17A

Rise Time

28 ns

Maximum Forward Voltage (Max)

1.6 V

Input Capacitance (Ciss)

2070pF @50V(Vds)

Input Power (Max)

190 W

Fall Time

50 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

190W (Tc)

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STB18NM80 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

10.75 mm

Size-Width

10.4 mm

Size-Height

4.6 mm

Operating Temperature

150℃ (TJ)

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STB18NM80 Environmental

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STB18NM80 Datasheet

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