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STB20NM50FDT4 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

TO-263-3

Description:

D2PAK N-CH 500V 20A

Pictures:

3D Model

Symbol

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Product Pictures

Documentation:

STB20NM50FDT4 Datasheet (16 Pages)

Package Outline Dimension on10 Page 11 Page 12 Page 13 Page

STB20NM50FDT4 Datasheet PDF (16 Pages)

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STB20NM50FDT4 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-263-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

250 mΩ

Polarity

N-Channel

Power Dissipation

192 W

Drain to Source Voltage (Vds)

500 V

Breakdown Voltage (Drain to Source)

500 V

Breakdown Voltage (Gate to Source)

±30.0 V

Continuous Drain Current (Ids)

20.0 A

Rise Time

20 ns

Input Capacitance (Ciss)

1380pF @25V(Vds)

Input Power (Max)

192 W

Fall Time

15 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

192W (Tc)

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STB20NM50FDT4 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Width

9.35 mm

Operating Temperature

150℃ (TJ)

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STB20NM50FDT4 Environmental

STB20NM50FDT4 Function Overview

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STB20NM50FDT4 Datasheet

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