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STB21NM60ND Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

TO-263-3

Description:

STMICROELECTRONICS STB21NM60ND Power MOSFET, N Channel, 17A, 600V, 0.17Ω, 10V, 4V

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Documentation:

STB21NM60ND Datasheet (21 Pages)

Package Outline Dimension on10 Page 11 Page 12 Page 13 Page 14 Page

STB21NM60ND Datasheet PDF (21 Pages)

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STB21NM60ND Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-263-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.17 Ω

Polarity

N-Channel

Power Dissipation

140 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

600 V

Rise Time

16 ns

Input Capacitance (Ciss)

1800pF @50V(Vds)

Input Power (Max)

140 W

Fall Time

48 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

140W (Tc)

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STB21NM60ND Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

10.75 mm

Size-Width

10.4 mm

Size-Height

4.6 mm

Operating Temperature

150℃ (TJ)

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STB21NM60ND Environmental

STB21NM60ND Export Classifications

STB21NM60ND Function Overview

STB21NM60ND Documents

STB21NM60ND Datasheet

ST Microelectronics

21 Pages / 1.36 MByte

STB21NM60ND Other Datasheet PDF

ST Microelectronics

3 Pages / 0.31 MByte

STB21NM60ND Packaging

ST Microelectronics

22 Pages / 1.34 MByte

STB21NM60ND Notice File

ST Microelectronics

10 Pages / 0.75 MByte

STB21NM60 Documents

STB21NM60ND Datasheet PDF

ST Microelectronics

STMICROELECTRONICS STB21NM60ND Power MOSFET, N Channel, 17A, 600V, 0.17Ω, 10V, 4V

STB21NM60N Datasheet PDF

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Trans MOSFET N-CH 600V 17A 3Pin(2+Tab) D2PAK T/R

STB21NM60N-1 Datasheet PDF

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N-CHANNEL 600V - 0.19Ω - 17A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET

STB21NM60N- Datasheet PDF

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N-channel 600V - 0.17Ω - 17A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh Power MOSFET

STB21NM60ND_09 Datasheet PDF

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