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Part Datasheet Search > MOSFETs > ST Microelectronics > STB23NM50N Datasheet PDF
STB23NM50N
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STB23NM50N Datasheet PDF (21 Pages)
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STB23NM50N Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Drain to Source Resistance (on) (Rds)
0.162 Ω
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
500 V
Rise Time
19 ns
Input Capacitance (Ciss)
1330pF @50V(Vds)
Input Power (Max)
125 W
Fall Time
29 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
125W (Tc)

STB23NM50N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.75 mm
Size-Width
10.4 mm
Size-Height
4.6 mm
Operating Temperature
150℃ (TJ)

STB23NM50N Documents

ST Microelectronics
21 Pages / 0.84 MByte
ST Microelectronics
10 Pages / 0.75 MByte

STB23NM50 Documents

ST Microelectronics
STMICROELECTRONICS STB23NM50N MOSFET Transistor, N Channel, 17A, 500V, 0.162Ω, 10V, 3V
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