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Part Datasheet Search > MOSFETs > ST Microelectronics > STB26NM60N Datasheet PDF
STB26NM60N
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STB26NM60N Datasheet PDF (17 Pages)
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STB26NM60N Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.135 Ω
Polarity
N-Channel
Power Dissipation
140 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
20A
Rise Time
25 ns
Input Capacitance (Ciss)
1800pF @50V(Vds)
Input Power (Max)
140 W
Fall Time
50 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
140W (Tc)

STB26NM60N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.75 mm
Size-Width
10.4 mm
Size-Height
4.6 mm
Operating Temperature
150℃ (TJ)

STB26NM60N Documents

ST Microelectronics
17 Pages / 1.11 MByte
ST Microelectronics
3 Pages / 0.31 MByte
ST Microelectronics
23 Pages / 1.11 MByte
ST Microelectronics
10 Pages / 0.75 MByte

STB26NM60 Documents

ST Microelectronics
D2PAK N-CH 600V 20A
ST Microelectronics
D2PAK N-CH 600V 22A
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