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Part Datasheet Search > High Voltage MOS > ST Microelectronics > STB33N60DM2 Datasheet PDF
STB33N60DM2
$ 3.166
STB33N60DM2 Datasheet PDF (21 Pages)
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STB33N60DM2 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.11 Ω
Polarity
N-Channel
Power Dissipation
190 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
25A
Input Capacitance (Ciss)
1870pF @100V(Vds)
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
190W (Tc)

STB33N60DM2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.4 mm
Size-Width
9.35 mm
Size-Height
4.6 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STB33N60DM2 Documents

ST Microelectronics
21 Pages / 0.87 MByte
ST Microelectronics
21 Pages / 1.05 MByte

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