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STB33N65M2 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

TO-263-3

Description:

D2PAK N-CH 650V 24A

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STB33N65M2 Datasheet PDF (24 Pages)

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STB33N65M2 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-263-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

117 mΩ

Polarity

N-CH

Power Dissipation

190 W

Threshold Voltage

2 V

Drain to Source Voltage (Vds)

650 V

Breakdown Voltage (Drain to Source)

650 V

Continuous Drain Current (Ids)

24A

Rise Time

11.5 ns

Input Capacitance (Ciss)

1790pF @100V(Vds)

Fall Time

9 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

190W (Tc)

STB33N65M2 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

10.4 mm

Size-Width

9.35 mm

Size-Height

4.6 mm

Operating Temperature

150℃ (TJ)

STB33N65M2 Environmental

STB33N65M2 Function Overview

STB33N65M2 Documents

STB33N65M2 Other Datasheet PDF

ST Microelectronics

24 Pages / 0.75 MByte

STB33N65M2 Packaging

ST Microelectronics

23 Pages / 0.77 MByte

STB33N65 Documents

STB33N65M2 Datasheet PDF

ST Microelectronics

D2PAK N-CH 650V 24A

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