STB34NM60ND Datasheet PDF - ST Microelectronics

●The STB34NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ V Power MOSFET produced using ST"s MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting product boasts an extremely low ON-resistance that is unrivalled among silicon-based Power MOSFET and superior switching performance with intrinsic fast-recovery body diode.

● The worldwide best RDS (ON) area amongst the fast recovery diode device

● 100% Avalanche tested

● Low gate input resistance

● The world"s best RDS (ON) in TO-220 amongst the fast recovery diode devices

● Extremely high dV/dt and avalanche capabilities