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Part Datasheet Search > High Voltage MOS > ST Microelectronics > STB35N60DM2 Datasheet PDF
STB35N60DM2
$ 4.409
STB35N60DM2 Datasheet PDF (16 Pages)
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STB35N60DM2 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.094 Ω
Polarity
N-Channel
Power Dissipation
210 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
28A
Rise Time
17 ns
Input Capacitance (Ciss)
2400pF @100V(Vds)
Fall Time
10.7 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
210W (Tc)

STB35N60DM2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
9.35 mm
Size-Width
10.4 mm
Size-Height
4.6 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STB35N60DM2 Documents

ST Microelectronics
16 Pages / 0.73 MByte
ST Microelectronics
1 Pages / 0.11 MByte
ST Microelectronics
15 Pages / 0.88 MByte

STB35N60 Documents

ST Microelectronics
D2PAK N-CH 600V 28A
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