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Part Datasheet Search > MOSFETs > ST Microelectronics > STB55NF06LT4 Datasheet PDF
STB55NF06LT4
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STB55NF06LT4 Datasheet PDF (15 Pages)
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STB55NF06LT4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
60.0 V
Current Rating
55.0 A
Case/Package
TO-263-3
Power Rating
95 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.014 Ω
Polarity
N-Channel
Power Dissipation
95 W
Threshold Voltage
1.7 V
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60.0 V
Breakdown Voltage (Gate to Source)
±16.0 V
Continuous Drain Current (Ids)
220 A
Rise Time
100 ns
Input Capacitance (Ciss)
1700pF @25V(Vds)
Input Power (Max)
95 W
Fall Time
20 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
95W (Tc)

STB55NF06LT4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.75 mm
Size-Width
10.4 mm
Size-Height
4.6 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

STB55NF06LT4 Documents

ST Microelectronics
15 Pages / 0.32 MByte
ST Microelectronics
15 Pages / 0.49 MByte

STB55NF06 Documents

ST Microelectronics
N-CHANNEL 60V - 0.015Ω - 50A TO-220/TO-220FP/I²PAK/D²PAKSTripFET™ II POWER MOSFET
ST Microelectronics
D2PAK N-CH 60V 55A
ST Microelectronics
D2PAK N-CH 60V 50A
ST Microelectronics
N-CHANNEL 60V - 0.014Ω - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET
ST Microelectronics
I2PAK N-CH 60V 55A
ST Microelectronics
I2PAK N-CH 60V 50A
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