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Part Datasheet Search > MOSFETs > ST Microelectronics > STB80NF10T4 Datasheet PDF
STB80NF10T4
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STB80NF10T4 Datasheet PDF (14 Pages)
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STB80NF10T4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
80.0 A
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
12 mΩ
Polarity
N-Channel
Power Dissipation
300 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
80.0 A
Rise Time
80 ns
Input Capacitance (Ciss)
5500pF @25V(Vds)
Input Power (Max)
300 W
Fall Time
60 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

STB80NF10T4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.4 mm
Size-Width
9.35 mm
Size-Height
4.6 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

STB80NF10T4 Documents

ST Microelectronics
14 Pages / 0.56 MByte
ST Microelectronics
15 Pages / 0.55 MByte
ST Microelectronics
10 Pages / 0.75 MByte
ST Microelectronics
1 Pages / 0.12 MByte

STB80NF10 Documents

ST Microelectronics
D2PAK N-CH 100V 80A
ST Microelectronics
STMICROELECTRONICS STB80NF10T4 MOSFET Transistor, N Channel, 40A, 100V, 0.012Ω, 10V, 3V
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