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Part Datasheet Search > MOSFETs > ST Microelectronics > STD100N10F7 Datasheet PDF
STD100N10F7
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STD100N10F7 Datasheet PDF (23 Pages)
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STD100N10F7 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0068 Ω
Polarity
N-Channel
Power Dissipation
120 W
Threshold Voltage
4.5 V
Input Capacitance
4369 pF
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
80A
Rise Time
40 ns
Input Capacitance (Ciss)
4369pF @50V(Vds)
Input Power (Max)
120 W
Fall Time
15 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
120W (Tc)

STD100N10F7 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.6 mm
Size-Width
6.2 mm
Size-Height
2.4 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

STD100N10F7 Documents

ST Microelectronics
23 Pages / 1.62 MByte
ST Microelectronics
21 Pages / 1.48 MByte
ST Microelectronics
3 Pages / 0.03 MByte

STD100N10 Documents

ST Microelectronics
DPAK N-CH 100V 80A
ST Microelectronics
Trans MOSFET N-CH 100V 80A Automotive 3Pin(2+Tab) DPAK T/R
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