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Part Datasheet Search > MOSFETs > ST Microelectronics > STD10NM60N Datasheet PDF
STD10NM60N
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STD10NM60N Datasheet PDF (17 Pages)
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STD10NM60N Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.53 Ω
Polarity
N-Channel
Power Dissipation
70 W
Threshold Voltage
3 V
Input Capacitance
540 pF
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Rise Time
12 ns
Input Capacitance (Ciss)
540pF @50V(Vds)
Input Power (Max)
70 W
Fall Time
15 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
70W (Tc)

STD10NM60N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.6 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STD10NM60N Documents

ST Microelectronics
17 Pages / 0.88 MByte
ST Microelectronics
29 Pages / 0.54 MByte
ST Microelectronics
27 Pages / 1.22 MByte
ST Microelectronics
5 Pages / 0.04 MByte

STD10NM60 Documents

ST Microelectronics
N-channel 600V, 0.53Ω, 10A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET
ST Microelectronics
STMICROELECTRONICS STD10NM60ND Power MOSFET, N Channel, 8A, 600V, 0.57Ω, 10V, 4V
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