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Part Datasheet Search > MOSFETs > ST Microelectronics > STD10P6F6 Datasheet PDF
STD10P6F6
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STD10P6F6 Datasheet PDF (9 Pages)
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STD10P6F6 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.13 Ω
Polarity
P-Channel
Power Dissipation
35 W
Threshold Voltage
4 V
Input Capacitance
340 pF
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Rise Time
5.3 ns
Maximum Forward Voltage (Max)
1.1 V
Input Capacitance (Ciss)
340pF @48V(Vds)
Input Power (Max)
35 W
Fall Time
3.7 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
35W (Tc)

STD10P6F6 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.6 mm
Size-Width
7.45 mm
Size-Height
2.38 mm
Operating Temperature
175℃ (TJ)

STD10P6F6 Documents

ST Microelectronics
9 Pages / 0.27 MByte
ST Microelectronics
25 Pages / 1.15 MByte
ST Microelectronics
24 Pages / 1.17 MByte
ST Microelectronics
5 Pages / 0.04 MByte

STD10P6 Documents

ST Microelectronics
Trans MOSFET P-CH 60V 10A 3Pin(2+Tab) DPAK T/R
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