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Part Datasheet Search > MOSFETs > ST Microelectronics > STD11N65M5 Datasheet PDF
STD11N65M5
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STD11N65M5 Datasheet PDF (25 Pages)
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STD11N65M5 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
480 mΩ
Power Dissipation
85 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
650 V
Breakdown Voltage (Drain to Source)
650 V
Input Capacitance (Ciss)
620pF @100V(Vds)
Input Power (Max)
85 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
85W (Tc)

STD11N65M5 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.6 mm
Size-Width
6.2 mm
Size-Height
2.4 mm
Operating Temperature
150℃ (TJ)

STD11N65M5 Documents

ST Microelectronics
25 Pages / 1.27 MByte
ST Microelectronics
31 Pages / 0.97 MByte
ST Microelectronics
25 Pages / 1.24 MByte

STD11N65 Documents

ST Microelectronics
MOSFET N-Ch 650V 0.43Ω 9A MDmesh V MOS
ST Microelectronics
STMICROELECTRONICS STD11N65M2 Power MOSFET, N Channel, 7A, 650V, 0.6Ω, 10V, 3V
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