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Part Datasheet Search > MOSFETs > ST Microelectronics > STD11NM60ND Datasheet PDF
STD11NM60ND
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STD11NM60ND Datasheet PDF - ST Microelectronics

Manufacturer:
ST Microelectronics
Category:
MOSFETs
Case Package:
TO-252-3
Description:
DPAK N-CH 600V 10A
Pictures:
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Documentation:
STD11NM60ND Datasheet (19 Pages)
Package Outline Dimension on11 Page12 Page13 Page14 Page15 Page
STD11NM60ND Datasheet PDF (19 Pages)
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STD11NM60ND Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
450 mΩ
Polarity
N-Channel
Power Dissipation
90 W
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
10A
Rise Time
7 ns
Input Capacitance (Ciss)
850pF @50V(Vds)
Input Power (Max)
90 W
Fall Time
9 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
90W (Tc)
View Datasheet >

STD11NM60ND Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.6 mm
Size-Width
6.2 mm
Size-Height
2.4 mm
Operating Temperature
150℃ (TJ)
View Datasheet >

STD11NM60ND Documents

STD11NM60ND Datasheet
ST Microelectronics
19 Pages / 0.74 MByte
STD11NM60ND Other Datasheet PDF
ST Microelectronics
20 Pages / 0.72 MByte

STD11NM60 Documents

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STD11NM60N-1 Datasheet PDF
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STD11NM60N-1_08 Datasheet PDF
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N-channel 600 V - 0.37 Ω - 10 A - TO-220 \- TO-220FP- I2PAK \- IPAK DPAK \- D2PAK second generation MDmesh™ Power MOSFET
STD11NM60ND_10 Datasheet PDF
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N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
STD11NM60NT4 Datasheet PDF
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N-channel 600V, 0.37Ω, 10A MDmesh(TM) II Power MOSFET in a DPAK package
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