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Part Datasheet Search > MOSFETs > ST Microelectronics > STD12N65M5 Datasheet PDF
STD12N65M5
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STD12N65M5 Datasheet PDF (23 Pages)
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STD12N65M5 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.39 Ω
Polarity
N-Channel
Power Dissipation
70 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
650 V
Breakdown Voltage (Drain to Source)
650 V
Rise Time
17.6 ns
Input Capacitance (Ciss)
900pF @100V(Vds)
Input Power (Max)
70 W
Fall Time
23.4 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
70W (Tc)

STD12N65M5 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6.6 mm
Size-Width
6.2 mm
Size-Height
2.4 mm
Operating Temperature
150℃ (TJ)

STD12N65M5 Documents

ST Microelectronics
23 Pages / 1.06 MByte
ST Microelectronics
20 Pages / 1.24 MByte
ST Microelectronics
16 Pages / 0.53 MByte

STD12N65 Documents

ST Microelectronics
8.5A, 650V, 0.43Ω, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3
ST Microelectronics
Trans MOSFET N-CH 650V 8A 3Pin(2+Tab) DPAK T/R
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