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Part Datasheet Search > MOSFETs > ST Microelectronics > STD13N60DM2 Datasheet PDF
STD13N60DM2
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STD13N60DM2 Datasheet PDF (17 Pages)
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STD13N60DM2 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
310 mΩ
Power Dissipation
110 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Rise Time
4.8 ns
Input Capacitance (Ciss)
730pF @100V(Vds)
Fall Time
10.6 ns
Fall Time (Max)
10.6 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
110W (Tc)

STD13N60DM2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

STD13N60DM2 Documents

ST Microelectronics
17 Pages / 0.64 MByte
ST Microelectronics
60 Pages / 4.35 MByte
ST Microelectronics
9 Pages / 0.38 MByte
ST Microelectronics
15 Pages / 0.75 MByte
ST Microelectronics
27 Pages / 0.85 MByte
ST Microelectronics
16 Pages / 0.79 MByte

STD13N60 Documents

ST Microelectronics
Trans MOSFET N-CH 600V 12A 3Pin(2+Tab) DPAK T/R
ST Microelectronics
Trans MOSFET N-CH 600V 11A 3Pin(2+Tab) DPAK T/R
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