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STD13N60M2
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STD13N60M2 Datasheet PDF (24 Pages)
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STD13N60M2 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.38 Ω
Power Dissipation
110 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
650 V
Rise Time
10 ns
Input Capacitance (Ciss)
580pF @100V(Vds)
Input Power (Max)
110 W
Fall Time
9.5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
110W (Tc)

STD13N60M2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.6 mm
Size-Width
6.2 mm
Size-Height
2.4 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STD13N60M2 Documents

ST Microelectronics
24 Pages / 0.84 MByte
ST Microelectronics
22 Pages / 1.46 MByte
ST Microelectronics
23 Pages / 0.76 MByte

STD13N60 Documents

ST Microelectronics
Trans MOSFET N-CH 600V 12A 3Pin(2+Tab) DPAK T/R
ST Microelectronics
Trans MOSFET N-CH 600V 11A 3Pin(2+Tab) DPAK T/R
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