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STD2NB80T4 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

TO-252-3

Description:

Trans MOSFET N-CH 800V 1.9A 3Pin(2+Tab) DPAK T/R

Pictures:

3D Model

Symbol

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Product Pictures

Documentation:

STD2NB80T4 Datasheet (9 Pages)

STD2NB80T4 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-252-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

6.5 Ω

Polarity

N-Channel

Power Dissipation

55 W

Breakdown Voltage (Drain to Source)

800 V

Breakdown Voltage (Gate to Source)

±30.0 V

Continuous Drain Current (Ids)

1.90 A

Rise Time

10 ns

Fall Time

17 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

65 ℃

View Datasheet >

STD2NB80T4 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Packaging

Tape & Reel (TR)

Size-Length

6.6 mm

Size-Width

6.2 mm

Size-Height

2.4 mm

View Datasheet >

STD2NB80T4 Environmental

STD2NB80T4 Documents

STD2NB80T4 Datasheet

ST Microelectronics

9 Pages / 0.29 MByte

STD2NB80 Documents

STD2NB80 Datasheet PDF

ST Microelectronics

DPAK N-CH 800V 1.9A

STD2NB80T4 Datasheet PDF

ST Microelectronics

Trans MOSFET N-CH 800V 1.9A 3Pin(2+Tab) DPAK T/R

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