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Part Datasheet Search > MOSFETs > ST Microelectronics > STD3NK80Z-1 Datasheet PDF
STD3NK80Z-1
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STD3NK80Z-1 Datasheet PDF (18 Pages)
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STD3NK80Z-1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-251-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
3.8 Ω
Polarity
N-Channel
Power Dissipation
70 W
Threshold Voltage
3.75 V
Drain to Source Voltage (Vds)
800 V
Continuous Drain Current (Ids)
1.25 A
Rise Time
27 ns
Input Capacitance (Ciss)
485pF @25V(Vds)
Input Power (Max)
70 W
Fall Time
40 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
70W (Tc)

STD3NK80Z-1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
6.6 mm
Size-Width
2.4 mm
Size-Height
6.2 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STD3NK80Z-1 Documents

ST Microelectronics
18 Pages / 0.85 MByte
ST Microelectronics
29 Pages / 1.32 MByte
ST Microelectronics
5 Pages / 0.04 MByte

STD3NK80 Documents

ST Microelectronics
N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET
ST Microelectronics
N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET
ST Microelectronics
DPAK N-CH 800V 2.5A
ST Microelectronics
N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET
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