STD5NM50T4 Datasheet PDF - ST Microelectronics

●The STD5NM50T4 is a MDmesh™ N-channel Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low On-resistance, impressively high dV/dt and excellent avalanche characteristics. The strip technique yields overall dynamic performance. It is suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

● 0.7R RDS (ON)

● High dV/dt and avalanche capabilities

● 100% Avalanche tested

● Low input capacitance and gate charge

● Low gate input resistance

● Tight process control and high manufacturing yields