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Part Datasheet Search > MOSFETs > ST Microelectronics > STD60NF06T4 Datasheet PDF
STD60NF06T4
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STD60NF06T4 Datasheet PDF (13 Pages)
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STD60NF06T4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.014 Ω
Polarity
N-Channel
Power Dissipation
110 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
60.0 A
Rise Time
108 ns
Input Capacitance (Ciss)
1810pF @25V(Vds)
Input Power (Max)
110 W
Fall Time
20 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
110W (Tc)

STD60NF06T4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.6 mm
Size-Width
6.2 mm
Size-Height
2.4 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

STD60NF06T4 Documents

ST Microelectronics
13 Pages / 0.39 MByte
ST Microelectronics
17 Pages / 0.8 MByte
ST Microelectronics
1 Pages / 0.13 MByte

STD60NF06 Documents

ST Microelectronics
Trans MOSFET N-CH 60V 60A 3Pin(2+Tab) DPAK T/R
ST Microelectronics
DPAK N-CH 60V 60A
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