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STD6NF10T4
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STD6NF10T4 Datasheet PDF (14 Pages)
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STD6NF10T4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
6.00 A
Case/Package
TO-252-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.22 Ω
Polarity
N-Channel
Power Dissipation
30 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
3.00 A
Rise Time
10 ns
Input Capacitance (Ciss)
280pF @25V(Vds)
Input Power (Max)
30 W
Fall Time
3 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
30W (Tc)

STD6NF10T4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.6 mm
Size-Width
6.2 mm
Size-Height
2.4 mm
Operating Temperature
-65℃ ~ 175℃ (TJ)

STD6NF10T4 Documents

ST Microelectronics
14 Pages / 0.31 MByte
ST Microelectronics
15 Pages / 0.3 MByte
ST Microelectronics
5 Pages / 0.04 MByte

STD6NF10 Documents

ST Microelectronics
N-CHANNEL 100V - 0.22Ω - 6A IPAK/DPAK LOW GATE CHARGE STRIPFET POWER MOSFET
ST Microelectronics
N-CHANNEL 100V - 0.22Ω - 6A IPAK/DPAK LOW GATE CHARGE STRIPFET POWER MOSFET
ST Microelectronics
N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET™ Power MOSFET
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