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Part Datasheet Search > MOSFETs > ST Microelectronics > STD8NM60ND Datasheet PDF
STD8NM60ND
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STD8NM60ND Datasheet PDF (17 Pages)
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STD8NM60ND Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
0.59 Ω
Polarity
N-Channel
Power Dissipation
70 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Rise Time
22 ns
Input Capacitance (Ciss)
560pF @50V(Vds)
Input Power (Max)
70 W
Fall Time
22 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
70W (Tc)

STD8NM60ND Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Size-Length
6.6 mm
Size-Width
6.2 mm
Size-Height
2.4 mm
Operating Temperature
150℃ (TJ)

STD8NM60ND Documents

ST Microelectronics
17 Pages / 0.7 MByte

STD8NM60 Documents

ST Microelectronics
N-channel 600V, 0.59Ω, 7A, FDmesh(TM) II Power MOSFET (with fast diode) DPAK
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N-channel 600V - 0.56Ω - 7A - TO-220 - TO-220FP - IPAK - DPAK
ST Microelectronics
DPAK N-CH 600V 7A
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