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STE180NE10 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

ISOTOP

Description:

Trans MOSFET N-CH 100V 180A 4Pin ISOTOP Tube

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

STE180NE10 Datasheet (12 Pages)

Package Outline Dimension on9 Page 10 Page

STE180NE10 Datasheet PDF (12 Pages)

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STE180NE10 Specifications

TYPE

DESCRIPTION

Mounting Style

Screw

Number of Pins

4 Pin

Voltage Rating (DC)

100 V

Current Rating

180 A

Case/Package

ISOTOP

Power Rating

360 W

Drain to Source Resistance (on) (Rds)

6 mΩ

Polarity

N-Channel

Power Dissipation

360 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

100 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

180 A

Rise Time

600 ns

Isolation Voltage

2.5 kV

Input Capacitance (Ciss)

21000pF @25V(Vds)

Input Power (Max)

360 W

Fall Time

440 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

360W (Tc)

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STE180NE10 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

STE180NE10 Environmental

STE180NE10 Function Overview

STE180NE10 Documents

STE180NE10 Datasheet

ST Microelectronics

12 Pages / 0.25 MByte

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STE180NE10 Datasheet PDF

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