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Part Datasheet Search > MOSFETs > ST Microelectronics > STE70NM50 Datasheet PDF
STE70NM50
$ 34.456
STE70NM50 Datasheet PDF (8 Pages)
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STE70NM50 Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
4 Pin
Voltage Rating (DC)
500 V
Current Rating
70.0 A
Case/Package
ISOTOP-4
Power Rating
600 W
Number of Positions
4 Position
Drain to Source Resistance (on) (Rds)
45 mΩ
Polarity
N-Channel
Power Dissipation
600 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
30.0 A
Rise Time
58 ns
Input Capacitance (Ciss)
7500pF @25V(Vds)
Input Power (Max)
600 W
Fall Time
46 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
600W (Tc)

STE70NM50 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
38.2 mm
Size-Width
25.5 mm
Size-Height
9.1 mm
Operating Temperature
150℃ (TJ)

STE70NM50 Documents

ST Microelectronics
8 Pages / 0.28 MByte
ST Microelectronics
1 Pages / 0.13 MByte

STE70 Documents

ST Microelectronics
STMICROELECTRONICS STE70NM50 MOSFET Transistor, N Channel, 30A, 500V, 45mohm, 10V, 4V
ST Microelectronics
STMICROELECTRONICS STE70NM60 Power MOSFET, N Channel, 30A, 600V, 50mohm, 10V, 4V
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