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Part Datasheet Search > MOSFETs > ST Microelectronics > STF11NM60N Datasheet PDF
STF11NM60N
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STF11NM60N Datasheet PDF (20 Pages)
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STF11NM60N Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
10.0 A
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
450 mΩ
Polarity
N-Channel
Power Dissipation
25 W
Input Capacitance
850 pF
Gate Charge
31.0 nC
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
10.0 A
Rise Time
18.5 ns
Input Capacitance (Ciss)
850pF @50V(Vds)
Input Power (Max)
25 W
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
25W (Tc)

STF11NM60N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
9.3 mm
Operating Temperature
150℃ (TJ)

STF11NM60N Documents

ST Microelectronics
20 Pages / 0.61 MByte
ST Microelectronics
18 Pages / 0.84 MByte
ST Microelectronics
1 Pages / 0.13 MByte

STF11NM60 Documents

ST Microelectronics
N-channel 600V, 0.37Ω, 10A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
ST Microelectronics
N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh™ Power MOSFET
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