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STF11NM60ND Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

TO-220-3

Description:

N-channel 600V, 0.37Ω, 10A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

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Documentation:

STF11NM60ND Datasheet (19 Pages)

Package Outline Dimension on11 Page 12 Page 13 Page 14 Page 15 Page

STF11NM60ND Datasheet PDF (19 Pages)

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STF11NM60ND Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.37 Ω

Polarity

N-Channel

Power Dissipation

25 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

600 V

Rise Time

7 ns

Input Capacitance (Ciss)

850pF @50V(Vds)

Input Power (Max)

25 W

Fall Time

9 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

25W (Tc)

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STF11NM60ND Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

10.4 mm

Size-Width

4.6 mm

Size-Height

16.4 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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STF11NM60ND Environmental

STF11NM60ND Function Overview

STF11NM60ND Documents

STF11NM60ND Datasheet

ST Microelectronics

19 Pages / 0.74 MByte

STF11NM60ND Drawing Diagrams

ST Microelectronics

1 Pages / 0.09 MByte

STF11NM60ND Notice File

ST Microelectronics

34 Pages / 0.79 MByte

STF11NM60 Documents

STF11NM60ND Datasheet PDF

ST Microelectronics

N-channel 600V, 0.37Ω, 10A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

STF11NM60N Datasheet PDF

ST Microelectronics

N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh™ Power MOSFET

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