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Part Datasheet Search > MOSFETs > ST Microelectronics > STF11NM60ND Datasheet PDF
STF11NM60ND
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STF11NM60ND Datasheet PDF (19 Pages)
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STF11NM60ND Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.37 Ω
Polarity
N-Channel
Power Dissipation
25 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Rise Time
7 ns
Input Capacitance (Ciss)
850pF @50V(Vds)
Input Power (Max)
25 W
Fall Time
9 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
25W (Tc)

STF11NM60ND Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
16.4 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STF11NM60ND Documents

ST Microelectronics
19 Pages / 0.74 MByte
ST Microelectronics
1 Pages / 0.09 MByte
ST Microelectronics
34 Pages / 0.79 MByte

STF11NM60 Documents

ST Microelectronics
N-channel 600V, 0.37Ω, 10A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
ST Microelectronics
N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh™ Power MOSFET
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