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Part Datasheet Search > High Voltage MOS > ST Microelectronics > STF35N60DM2 Datasheet PDF
STF35N60DM2
$ 3.641
STF35N60DM2 Datasheet PDF (13 Pages)
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STF35N60DM2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.094 Ω
Polarity
N-Channel
Power Dissipation
40 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Rise Time
17 ns
Input Capacitance (Ciss)
2400pF @100V(Vds)
Fall Time
10.7 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
40W (Tc)

STF35N60DM2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
16.4 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STF35N60DM2 Documents

ST Microelectronics
13 Pages / 0.66 MByte
ST Microelectronics
13 Pages / 0.54 MByte

STF35N60 Documents

ST Microelectronics
STMICROELECTRONICS STF35N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 28A, 600V, 0.094Ω, 10V, 4V
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