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STGB10NC60KDT4 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

IGBTs

Case Package:

TO-263-3

Description:

IGBT Single Transistor, 10A, 2.5V, 60W, 600V, TO-263, 3Pins

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Documentation:

STGB10NC60KDT4 Datasheet (20 Pages)

Package Outline Dimension on12 Page 13 Page 14 Page 15 Page 16 Page

STGB10NC60KDT4 Datasheet PDF (20 Pages)

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STGB10NC60KDT4 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Voltage Rating (DC)

600 V

Current Rating

10.0 A

Case/Package

TO-263-3

Number of Positions

3 Position

Polarity

N-Channel

Power Dissipation

60 W

Input Capacitance

380 pF

Gate Charge

19.0 nC

Drain to Source Voltage (Vds)

600 V

Continuous Drain Current (Ids)

10.0 A

Rise Time

6.00 ns

Breakdown Voltage (Collector to Emitter)

600 V

Thermal Resistance

62.5 ℃/W

Reverse recovery time

22 ns

Input Power (Max)

65 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

65 W

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STGB10NC60KDT4 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

10.4 mm

Size-Width

9.35 mm

Size-Height

4.6 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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STGB10NC60KDT4 Environmental

STGB10NC60KDT4 Export Classifications

STGB10NC60KDT4 Function Overview

STGB10NC60KDT4 Documents

STGB10NC60KDT4 Datasheet

ST Microelectronics

20 Pages / 0.59 MByte

STGB10NC60KDT4 Other Datasheet PDF

ST Microelectronics

1 Pages / 0.11 MByte

STGB10NC60KDT4 Notice File

ST Microelectronics

5 Pages / 0.04 MByte

STGB10NC60KDT4 Other References

ST Microelectronics

1 Pages / 0.13 MByte

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