STGB18N40LZT4 Datasheet PDF - ST Microelectronics

●The STGB18N40LZT4 is an internally clamped IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diode between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low ON-state voltage drop and low threshold drive for use in automotive ignition system. It is suitable for pencil coil electronic ignition drive.

● ESD gate-emitter protection

● Gate-collector high voltage clamping

● Logic level gate drive

● Low saturation voltage

● High pulsed current capability

● Gate and gate-emitter resistor

● 180mJ Avalanche energy @ TC = 150°C, L = 3mH