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Part Datasheet Search > IGBTs > ST Microelectronics > STGD5H60DF Datasheet PDF
STGD5H60DF
$ 0.592
STGD5H60DF Datasheet PDF (30 Pages)
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STGD5H60DF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Power Dissipation
83 W
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
134.5 ns
Input Power (Max)
83 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
83000 mW

STGD5H60DF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.6 mm
Size-Width
6.2 mm
Size-Height
2.4 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

STGD5H60DF Documents

ST Microelectronics
30 Pages / 0.84 MByte
ST Microelectronics
51 Pages / 2.12 MByte
ST Microelectronics
17 Pages / 0.18 MByte
ST Microelectronics
35 Pages / 2.4 MByte

STGD5H60 Documents

ST Microelectronics
Trans IGBT Chip N-CH 600V 10A 83000mW 3Pin(2+Tab) DPAK T/R
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