STGD5NB120SZT4 Datasheet PDF - ST Microelectronics

●The STGD5NB120SZT4 is a 1200V Low Drop Internally Clamped IGBT that utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. The IGBT is ideal for use in inrush current limitation and pre-heating for electronic lamp ballast. Improved switch-off energy spread versus increasing temperature result in reduced switching losses.

● Low on-voltage drop

● High current capability

● Off losses include tail current

● High voltage clamping, low VCE (sat) for reduced conduction losses

● Tight parameter distribution for design simplification and easy paralleling