STGF7NB60SL Datasheet PDF - ST Microelectronics

●This fast-switching STGF7NB60SL IGBT transistor from STMicroelectronics will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 25000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.