STGP10NC60S Datasheet PDF - ST Microelectronics

●You won"t need to worry about any lagging in your circuit with this STGP10NC60S IGBT transistor from STMicroelectronics. Its maximum power dissipation is 62500 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.