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Part Datasheet Search > IGBTs > ST Microelectronics > STGP15H60DF Datasheet PDF
STGP15H60DF
$ 2.32
STGP15H60DF Datasheet PDF (23 Pages)
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STGP15H60DF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
115000 mW
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
103 ns
Input Power (Max)
115 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
115 W

STGP15H60DF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
15.75 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

STGP15H60DF Documents

ST Microelectronics
23 Pages / 1.81 MByte

STGP15H60 Documents

ST Microelectronics
Trans IGBT Chip N-CH 600V 30A 115000mW 3Pin(3+Tab) TO-220 Tube
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