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STGW30NC60W
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STGW30NC60W Datasheet PDF (16 Pages)
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STGW30NC60W Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
60.0 A
Case/Package
TO-247-3
Drain to Source Resistance (on) (Rds)
2.50 Ω
Polarity
N-Channel
Power Dissipation
200 W
Breakdown Voltage (Drain to Source)
600 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
30.0 A
Rise Time
12.0 ns
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
200 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200000 mW

STGW30NC60W Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
15.75 mm
Size-Width
5.15 mm
Size-Height
20.15 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STGW30NC60W Documents

ST Microelectronics
16 Pages / 0.45 MByte
ST Microelectronics
1 Pages / 0.13 MByte

STGW30NC60 Documents

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ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 200000mW 3Pin(3+Tab) TO-247 Tube
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