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Part Datasheet Search > IGBTs > ST Microelectronics > STGW30V60DF Datasheet PDF
STGW30V60DF
$ 2.289
STGW30V60DF Datasheet PDF (22 Pages)
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STGW30V60DF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Power Dissipation
258 W
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
53 ns
Input Power (Max)
258 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
258 W

STGW30V60DF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.75 mm
Size-Width
5.15 mm
Size-Height
20.15 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

STGW30V60DF Documents

ST Microelectronics
22 Pages / 1.86 MByte
ST Microelectronics
17 Pages / 0.18 MByte
ST Microelectronics
9 Pages / 0.23 MByte

STGW30V60 Documents

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Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin(3+Tab) TO-247 Tube
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