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Part Datasheet Search > IGBTs > ST Microelectronics > STGW35NB60SD Datasheet PDF
STGW35NB60SD
$ 31.033
STGW35NB60SD Datasheet PDF (13 Pages)
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STGW35NB60SD Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
35.0 A
Case/Package
TO-247-3
Number of Positions
3 Position
Polarity
N-Channel
Power Dissipation
200 W
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
70.0 A
Rise Time
70 ns
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
44 ns
Input Power (Max)
200 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200 W

STGW35NB60SD Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.75 mm
Size-Width
5.15 mm
Size-Height
20.15 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STGW35NB60SD Documents

ST Microelectronics
13 Pages / 0.23 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
30 Pages / 0.31 MByte

STGW35NB60 Documents

ST Microelectronics
Trans IGBT Chip N-CH 600V 70A 200000mW 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 70A 3Pin(3+Tab) TO-247
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