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Part Datasheet Search > IGBTs > ST Microelectronics > STGW80H65DFB-4 Datasheet PDF
STGW80H65DFB-4
$ 5.717
STGW80H65DFB-4 Datasheet PDF (22 Pages)
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STGW80H65DFB-4 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
4 Pin
Case/Package
TO-247-4
Power Dissipation
469000 mW
Breakdown Voltage (Collector to Emitter)
650 V
Reverse recovery time
85 ns
Input Power (Max)
469 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
469000 mW

STGW80H65DFB-4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

STGW80H65DFB-4 Documents

ST Microelectronics
22 Pages / 1.42 MByte

STGW80H65 Documents

ST Microelectronics
Trans IGBT Chip N-CH 650V 120A 469000mW 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 650V 120A 469000mW 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 650V 120A 469000mW 4Pin(4+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 650V 120A 469000mW 4Pin(4+Tab) TO-247 Tube
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