STGW80H65FB Datasheet PDF - ST Microelectronics

●You can use this STGW80H65FB IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 469000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes field stop|trench technology.