STGW80V60DF Datasheet PDF - ST Microelectronics

●This STGW80V60DF IGBT transistor from STMicroelectronics will work perfectly in your circuit. Its maximum power dissipation is 469000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C.