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Part Datasheet Search > IGBTs > ST Microelectronics > STGWA40M120DF3 Datasheet PDF
STGWA40M120DF3
$ 4.593
STGWA40M120DF3 Datasheet PDF (18 Pages)
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STGWA40M120DF3 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Power Dissipation
468 W
Breakdown Voltage (Collector to Emitter)
1200 V
Reverse recovery time
355 ns
Input Power (Max)
468 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
468000 mW

STGWA40M120DF3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

STGWA40M120DF3 Documents

ST Microelectronics
18 Pages / 1 MByte
ST Microelectronics
2 Pages / 0.27 MByte
ST Microelectronics
35 Pages / 2.4 MByte
ST Microelectronics
5 Pages / 0.04 MByte

STGWA40M120 Documents

ST Microelectronics
Trans IGBT Chip N-CH 1200V 80A 468000mW 3Pin(3+Tab) TO-247 Tube
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