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Part Datasheet Search > IGBTs > ST Microelectronics > STGWT40V60DLF Datasheet PDF
STGWT40V60DLF
$ 19.832
STGWT40V60DLF Datasheet PDF (17 Pages)
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STGWT40V60DLF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Power Dissipation
283000 mW
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
283 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
283 W

STGWT40V60DLF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.7 mm
Size-Width
5.7 mm
Size-Height
26.7 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

STGWT40V60DLF Documents

ST Microelectronics
17 Pages / 1.25 MByte

STGWT40V60 Documents

ST Microelectronics
Trans IGBT Chip N-CH 600V 80A 283000mW 3Pin(3+Tab) TO-3P Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 80A 283000mW 3Pin(3+Tab) TO-3P Tube
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