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Part Datasheet Search > MOSFETs > ST Microelectronics > STH315N10F7-6 Datasheet PDF
STH315N10F7-6
$ 3.371
STH315N10F7-6 Datasheet PDF (19 Pages)
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STH315N10F7-6 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
7 Pin
Case/Package
TO-263-7
Number of Channels
1 Channel
Number of Positions
7 Position
Drain to Source Resistance (on) (Rds)
0.0021 Ω
Polarity
N-Channel
Power Dissipation
315 W
Threshold Voltage
3.5 V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Rise Time
108 ns
Input Capacitance (Ciss)
12800pF @25V(Vds)
Fall Time
40 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
315W (Tc)

STH315N10F7-6 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 175℃ (TJ)

STH315N10F7-6 Documents

ST Microelectronics
19 Pages / 1.11 MByte
ST Microelectronics
17 Pages / 0.7 MByte
ST Microelectronics
19 Pages / 1.1 MByte
ST Microelectronics
5 Pages / 0.04 MByte

STH315N10 Documents

ST Microelectronics
STMICROELECTRONICS STH315N10F7-6 MOSFET Transistor, N Channel, 180A, 100V, 0.0021Ω, 10V, 3.5V
ST Microelectronics
H2PAK N-CH 100V 180A
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