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STN1N20 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

TO-261-4

Description:

Trans MOSFET N-CH 200V 1A 4Pin(3+Tab) SOT-223 T/R

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

STN1N20 Datasheet (12 Pages)

Package Outline Dimension on9 Page 10 Page

STN1N20 Datasheet PDF (12 Pages)

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STN1N20 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

4 Pin

Voltage Rating (DC)

200 V

Current Rating

1.00 A

Case/Package

TO-261-4

Drain to Source Resistance (on) (Rds)

1.50 Ω

Polarity

N-Channel

Power Dissipation

2.9 W

Drain to Source Voltage (Vds)

200 V

Breakdown Voltage (Drain to Source)

200 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

1.00 A

Rise Time

6 ns

Input Capacitance (Ciss)

206pF @25V(Vds)

Input Power (Max)

2.9 W

Fall Time

5 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2.9W (Tc)

View Datasheet >

STN1N20 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not Recommended for New Designs

Packaging

Cut Tape (CT)

Size-Length

6.5 mm

Size-Width

3.5 mm

Size-Height

1.8 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

STN1N20 Environmental

STN1N20 Function Overview

STN1N20 Documents

STN1N20 Datasheet

ST Microelectronics

12 Pages / 0.49 MByte

STN1N20 Other References

ST Microelectronics

1 Pages / 0.13 MByte

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