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STN1NK60Z
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STN1NK60Z Datasheet PDF (16 Pages)
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STN1NK60Z Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Voltage Rating (DC)
600 V
Current Rating
250 mA
Case/Package
TO-261-4
Power Rating
3.3 W
Number of Channels
1 Channel
Number of Positions
4 Position
Drain to Source Resistance (on) (Rds)
15 Ω
Polarity
N-Channel
Power Dissipation
2 W
Threshold Voltage
3.75 V
Input Capacitance
94 pF
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
300 mA
Rise Time
5 ns
Input Capacitance (Ciss)
94pF @25V(Vds)
Input Power (Max)
3.3 W
Fall Time
28 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.3W (Tc)

STN1NK60Z Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
3.5 mm
Size-Height
1.8 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STN1NK60Z Documents

ST Microelectronics
16 Pages / 0.45 MByte
ST Microelectronics
19 Pages / 0.95 MByte
ST Microelectronics
18 Pages / 0.97 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
1 Pages / 0.13 MByte

STN1NK60 Documents

ST Microelectronics
N-CHANNEL 600V - 13Ω - 0.8A TO-92/IPAK/SOT-223 ZENER-PROTECTED SUPERMESH MOSFET
ST Microelectronics
Trans MOSFET N-CH 600V 0.44A 4-Pin(3+Tab) SOT-223 T/R
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