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Part Datasheet Search > MOSFETs > ST Microelectronics > STP100N8F6 Datasheet PDF
STP100N8F6
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STP100N8F6 Datasheet PDF (16 Pages)
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STP100N8F6 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
8 mΩ
Power Dissipation
176 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
80 V
Breakdown Voltage (Drain to Source)
80 V
Rise Time
46 ns
Input Capacitance (Ciss)
5955pF @25V(Vds)
Fall Time
21 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
176W (Tc)

STP100N8F6 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

STP100N8F6 Documents

ST Microelectronics
16 Pages / 0.59 MByte
ST Microelectronics
21 Pages / 0.92 MByte
ST Microelectronics
15 Pages / 0.73 MByte

STP100N8 Documents

ST Microelectronics
Trans MOSFET N-CH 80V 100A 3Pin(3+Tab) TO-220 Tube
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